FDW2504P_02 Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
ID = -3.8A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = -4.5V
0.1 ^{SINGLE PULSE}
RθJA = 208^oC/W
TA = 25^oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2504P Rev. E (W)