FDW2504P_02 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

May 2002
FDW2504P
Dual P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –3.8 A, –20 V, RDS(ON) = 0.043 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
1
8
2
7
3
6
4
5
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.8
–30
1.0
0.6
–55 to +150
125
208
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2504P
FDW2504P
13’’
Tape width
12mm
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDW2504P Rev. E (W)