FDS9953A Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

Typical Characteristics
10
V_GS = -10V
8
-6.0V
-4.5V
6
-4.0V
4
-3.5V
2
-3.0V
0
0
1
2
3
4
5
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = -1A
V_GS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T _J, JUNCTION TEMPERATURE ( ^oC)
Figure 3. On-Resistance Variation with
Temperature.
6
V_DS = -5V
5
4
T _A = -55^oC
25^oC
125^oC
3
2
1
0
1.5
2
2.5
3
3.5
4
4.5
-V _GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
3
V_GS = -3.5V
2.5
2
-4.0V
-4.5V
-5.0V
1.5
-6.0V
1
-10V
0.5
0
2
4
6
8
10
-I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
I_D = -0.5 A
0.4
0.3
T _A = 125^oC
0.2
T _A = 25^oC
0.1
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1
0.1
0.01
0.001
V_GS = 0V
T _A= 125^oC
25^oC
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9953A Rev B(W)