FDS9953A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

May 2001
FDS9953A
Dual 30V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –2.9 A, –30 V
RDS(ON) = 130 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (2.5nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D2DD1DD1
D^D2
SO-8
Pin 1 SO-8
S1GG¹
S_S2G^{S2 S}
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9953A
FDS9953A
13’’
©2001 Fairchild Semiconductor Corporation
5
4
6
Q1
3
7
2
Q2
8
1
Ratings
–30
±25
±2.9
±10
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS9953A Rev B(W)