FDS7079ZN3 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -16A
8
6
4
V_DS = -10V
-15V
-20V
2
0
0
10
20
30
40
50
60
70
80
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
V_GS = -10V
0.1 SINGLE PULSE
R_θJA = 85^oC/W
T_A = 25^oC
0.01
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
5000
4000
3000
f = 1 MHz
V_GS = 0 V
C_iss
2000
C_oss
1000
C_rss
0
0
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 85°C/W
40
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R_θJA(t) = r(t) * R_θJA
R_θJA = 85^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS7079ZN3 Rev C1 (W)