FDS7079ZN3 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

February 2004
FDS7079ZN3
30 Volt P-Channel PowerTrench^ MOSFET
General Description
Advanced P Channel MOSFET combined with
Advanced SO8 FLMP package providing a device with
extremely low thermal impedance and improved
electrical performance.
Applications for this device include multi-cell battery
protection and charging, including protection and load
switching in notebook computer and notebook battery
packs.
Features
• –16 A, –30 V. R_DS(ON) = 7.5 mΩ @ V_GS = –10 V
R_DS(ON) = 11.5 mΩ @ V_GS = – 4.5 V
• ESD protection diode (note 3)
• ESD rating: 4kV
• High performance trench technology for extremely
low R_DS(ON)
• FLMP SO-8 package for enhanced thermal
performance in industry-standard package size
D^NCDNCDNCDNC
D
FLMP SO-8
Pin 1SO-
SSSS ^SSGG
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7079ZN3
FDS7079ZN3
13’’
2004 Fairchild Semiconductor Corporation
Bottom Side Drain Contact
5
4
6
3
7
2
8
1
Ratings
–30
±25
–16
–60
3.13
1.5
–55 to +150
Units
V
V
A
W
°C
40
°C/W
0.5
Tape width
12mm
Quantity
2500 units
FDS7079ZN3 Rev C1 (W)