FDS6690 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Typical Electrical And Thermal Characteristics
10
I_D = 10A
8
6
4
2
0
0
5
V_DS = 5V
10V
15V
10
15
20
25
Q_g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2000
1000
C _iss
500
C _oss
200 f = 1 MHz
VGS = 0V
100
0.1
0.5
1
2
C _rss
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
30
RDS(ON) ^LIMIT
10
3
0.5
V_GS = 10V
0.1 _{SINGLE PULSE}
100us
1ms
10ms
100ms
1s
D1C0s
R_θJA =125°C/W
TA = 25°C
0.01
0.05 0.1 0.2
0.5 1 2
5 10 20 30 50
V_DS , DRAIN-SOURCE VOLTAGE (V)
30
25
20
15
10
5
0
0.01
SINGLE PULSE
R θJA =125° C/W
T_A = 25°C
0.1
0.5 1
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA = 125°C/W
P(pk)
t_{1 t 2}
T_J - T_A = P * R _θJA(t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690 Rev.C