FDS6690 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

January 2000
FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
This N Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable R_DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
Features
10 A, 30 V. R_DS(ON) = 0.0135 Ω @ V_GS = 10 V
R_DS(ON) = 0.0200 Ω @ V_GS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
FD66S90
SO-8
pin 1
S
G
S
S
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
T_A = 25^oC unless other wise noted
(Note 1a)
P_D
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS6690
30
±20
10
50
2.5
1.2
1
-55 to 150
50
25
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS6690 Rev.C