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FDPF16N50T Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250μA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
102
101
Operation in This Area
100
is Limited by R DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 8 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Figure 11. Transient Thermal Response Curve
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2
sing le pu lse
PDM
t1
* N o te s :
t2
1. Z (t) = 3.3 oC /W M ax.
θJC
2 . D u ty F actor, D = t /t
12
3. T - T = P * Z (t)
JM
C
DM
θJC
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
©2012 Fairchild Semiconductor Corporation
4
FDPF16N50 / FDPF16N50T Rev C2
www.fairchildsemi.com
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