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FDPF16N50T Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ
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Package Marking and Ordering Information
Part Number
FDPF16N50
FDPF16N50T
Top Mark
FDPF16N50
FDPF16N50T
Package
TO-220F
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
500
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
--
VDS = 400V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 8A
--
gFS
Forward Transconductance
VDS = 40V, ID = 8A
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 16A
RG = 25Ω
VDS = 400V, ID = 16A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4)
--
--
--
(Note 4)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 16A
--
trr
Reverse Recovery Time
VGS = 0V, IS = 16A
--
Qrr
Reverse Recovery Charge
dIF/dt =100A/μs
--
Typ.
--
0.5
--
--
--
--
--
0.31
23
1495
235
20
40
150
65
80
32
8.5
14
--
--
--
490
5.0
Max Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0
V
0.38 Ω
--
S
1945 pF
310 pF
30
pF
90
ns
310 ns
140 ns
170 ns
45
nC
--
nC
--
nC
9.2
A
37
A
1.4
V
--
ns
--
μC
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.5 mH, IAS = 16 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2012 Fairchild Semiconductor Corporation
2
FDPF16N50 / FDPF16N50T Rev C2
www.fairchildsemi.com
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