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| FDP8860 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET | |||
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Typical Characteristics TJ = 25°C unless otherwise noted
10
VDD = 12V
8
20000
10000
6
VDD = 15V
f = 1MHz
VGS = 0V
Ciss
4
VDD = 18V
Coss
2
Crss
1000
0
0
40
80
120
160
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
500
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
200
100
TJ = 25oC
10
TJ = 175oC
1
10-3 10-2 10-1 100 101 102 103 104
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
280
240
200
VGS=10V
160
VGS=4.5V
120
80
40
Limited by Package
RθJC = 0.59oC/W
0
25 50 75 100 125 150 175
T , CASE TEMPERATURE (oC)
C
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
2000
1000
100
10us
100us
10 LIMITED BY
PACKAGE
1ms
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
LIMITED BY rDS(on) TC = 25OC
0.1
1
10
10ms
DC
50
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe
Operating Area
105
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
104
I = I25
1----7---5-----â-----T---C--
125
TC = 25oC
103
SINGLE PULSE
102
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDP8860 Rev.B
4
www.fairchildsemi.com
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