FDP8860 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

September 2006
FDP8860
N-Channel PowerTrench^® MOSFET
tm
30V, 80A, 2.5mΩ
Features
General Description
„ Max r_DS(on) = 2.5mΩ at V_GS = 10V, I_D = 80A
„ Max r_DS(on) = 2.9mΩ at V_GS = 4.5V, I_D = 80A
„ Low Miller Charge
„ Low Q_rr Body Diode
„ UIL Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r_DS(on) and fast
switching speed.
Application
„ DC - DC Conversion
„ Start / Alternator Sytems
D
G
D
S
G
TO-220
FDP Series
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
T_C = 25°C
T_C = 25°C
Thermal Characteristics
S
(Note 1)
(Note 2)
Ratings
30
±20
80
219
556
673
254
-55 to +175
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case TO220
Thermal Resistance, Junction to Ambient TO220
Package Marking and Ordering Information
0.59
°C/W
62
Device Marking
FDP8860
Device
FDP8860
Package
TO220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
©2006 Fairchild Semiconductor Corporation
1
FDP8860 Rev.B
www.fairchildsemi.com