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| FDP3651U Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM | |||
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Typical Characteristics TJ = 25°C unless otherwise noted
10
VDD = 45V
10000
VDD = 50V
8
VDD = 55V
1000
6
Ciss
Coss
4
Crss
100
2
0
0
10
20
30
40
50
60
f = 1MHz
VGS = 0V
10
0.1
1
10
100
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
10
TJ = 25oC
TJ = 150oC
100
PACKAGE MAY LIMIT
CURRENT IN THIS REGION
80
VGS=10V
60
VGS=8V
40
20
1
10-3
10-2
10-1
100
101
102
103
tAV, TIME IN AVALANCHE(ms)
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
500
10us
100
OPERATION IN THIS
10 AREA MAY BE
LIMITED BY RDS(ON)
100us
1
SINGLE PULSE
TJ=MAX RATED
Tc=25oC
0.1
1
10
1ms
10ms
DC
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
105
VGS = 10V
104
103
SINGLE PULSE
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----7---5-----â----T----c--
150
102
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDP3651U Rev. A
4
www.fairchildsemi.com
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