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| FDP3651U Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM | |||
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July 2006
FDP3651U
N-Channel PowerTrench® MOSFET
100V, 80A, 15mâ¦
Features
⢠rDS(on)=13 mâ¦(Typ.), VGS = 10V, ID = 40A
⢠Qg(TOT)=49 nc(Typ.), VGS = 10 V
⢠Low Miller Charge
Applications
⢠DC/DC converters and Off-Line UPS
⢠Distributed Power Architectures and VRMs
⢠Primary Switch for 24V and 48V Systems
⢠Low Qrr Body Diode
⢠UIS Capability (Single Pulse/Repetitive Pulse)
⢠High Voltage Synchronous Rectifier
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1)
PD
EAS
TJ, TSTG
TL
Power Dissipation
Single Pulsed Avalanche Energy
Operating and Storage Temperature
Maximum lead temperature soldering purposes,
1/8â from case for 5 seconds
(Note 2)
Ratings
100
±20
80
220
255
266
-55 to 175
300
Units
V
V
A
W
mJ
°C
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient
Thermal Resistance , Junction to Case
Package Marking and Ordering Information
Device Marking
FDP3651U
Device
FDP3651U
Reel Size
Tube
62
°C/W
0.59
°C/W
Tape Width
N/A
Quantity
50 units
©2006 Fairchild Semiconductor Corporation
1
FDP3651U Rev. A
www.fairchildsemi.com
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