FDP18N20F Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – N-Channel MOSFET 200V, 18A, 0.14Ω

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250µA
-50T_{J, Jun0ction T5e0mpera1t0u0re [}o_C1]50 200
Figure 8-1. Maximum Safe Operating Area
- FDP18N20F
100
20µs
10
Operation in This Area
1 ^{is Limited by R DS(on)}
100µs
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
V_DS, Dr¹a⁰in-Source Volta¹g⁰e⁰[V]
600
Figure 8-2. Maximum Safe Operating Area
- FDPF18N20FT
100
10µs
100µs
10
1ms
Operation in This Area
1 ^{is Limited by R DS(on)}
10ms
0.1
0.01
1
*Notes:
DC
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
V_DS, Dr¹a⁰in-Source Volta¹g⁰e⁰[V]
600
Figure 9. Maximum Drain Current
vs. Case Temperature
20
16
12
8
4
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
Figure 10-1. Transient Thermal Response Curve - FDP18N20F
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 ^{Single pulse}
10^-5
10^-4
P_DM
t₁
*Notes:
t₂
1. Z_θJC(t) = 1.2^oC/W Max.
2. Duty Factor, D= t₁/t₂
3. T_JM - T_C = P_DM * Z_θJC(t)
10R^-3_ectangu1la0r^-2_{Pulse D1u0ra}^-1_{tion [sec1]0}⁰
10¹
10²
FDP18N20F / FDPF18N20FT Rev. A
4
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