FDP16N50 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
- FDP16N50
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 8 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-2. Maximum Safe Operating Area
- FDPF16N50
10²
10¹
Operation in This Area
10⁰
is Limited by R _DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10²
10¹
Operation in This Area
10⁰
is Limited by R _DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10^-1
10^-2
10⁰
* Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
V_DS, Drain-Source Voltage [V]
10^-1
10^-2
10⁰
* Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
4
FDP16N50 / FDPF16N50 Rev. B
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