FDP16N50 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
10² _{Top :}
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10¹ Bottom : 5.5 V
10⁰
10^-1
10^-1
* Notes :
1. 250µs Pulse Test
2. T = 25^oC
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
V = 10V
GS
0.4
V = 20V
GS
0.3
0.2
0
* Note : T = 25oC
J
5
10
15
20
25
30
35
40
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
4000
3000
C
oss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
2000
1000
C
iss
C
rss
* Note :
1. V = 0 V
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
-55^oC
10⁰
2
* Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
12
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
150^oC
25^oC
* Notes :
1. V = 0V
GS
2. 250µs Pulse Test
10⁰
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
V = 100V
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
* Note : I = 16A
D
0
0
10
20
30
40
Q , Total Gate Charge [nC]
G
3
FDP16N50 / FDPF16N50 Rev. B
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