FDP10N60NZ Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. V_GS = 0V
2. I_D = 250A
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
-FDP10N60NZ
100
30s
10
100s
1
Operation in This Area
is Limited by R _DS(on)
1ms
10ms
DC
0.1
0.01
0.1
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
1
10
100
1000 3000
V_DS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current vs.
Case Temperature
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
2.75
2.5
2.0
1.5
1.0
0.5
0.25
-100
*Notes:
1. V_GS = 10V
2. I_D = 5A
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Figure 10. Maximum Safe Operating Area
-FDPF10N60NZ
100
30s
10
100s
1
Operation in This Area
is Limited by R _DS(on)
1ms
10ms
0.1
0.01
1
*Notes:
1. T_C = 25^oC
DC
2. T_J = 150^oC
3. Single Pulse
10
100
1000 3000
V_DS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C0
4
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