FDP10N60NZ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m

March 2013
FDP10N60NZ / FDPF10N60NZ
N-Channel UniFET^TM II MOSFET
600 V, 10 A, 750 m
Features
• R_DS(on) = 640 m (Typ.) @ V_GS = 10 V, I_D = 5 A
• Low Gate Charge (Typ. 23 nC)
• Low C_rss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
Applications
• LCD/ LED/ PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFET^TM II MOSFET is Fairchild Semiconductor^®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET^TM II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
G
D
S
TO-220
G
D
S
TO-220F
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP10N60NZ FDPF10N60NZ
600
±25
10
10*
6
6*
40
40*
550
10
18.5
10
185
38
1.5
0.3
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
R_JC
R_CS
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FDP10N60NZ
0.68
0.5
62.5
FDPF10N60NZ
3.3
-
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDP10N60NZ / FDPF10N60NZ Rev. C0
www.fairchildsemi.com