FDP070AN06A0 Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 60V, 80A, 7m

Typical Characteristics T_C = 25°C unless otherwise noted
1000
100
10µs
100µs
1ms
OPERATION IN THIS
10
AREA MAY BE
LIMITED BY r_DS(ON)
10ms
DC
1
SINGLE PULSE
T_J = MAX RATED
T_C = 25^oC
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
500
If R = 0
tAV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
100
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
120
80
T_J = 25^oC
40
T_J = 175^oC
T_J = -55^oC
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
160
V_GS = 10V
120
V_GS = 7V
V_GS = 6V
80
T_C = 25^oC
PULSE DURATION = 80µs
40
DUTY CYCLE = 0.5% MAX
V_GS = 5V
0
0
0.5
1.0
1.5
2.0
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
14
12
V_GS = 6V
10
8
V_GS = 10V
6
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
V_GS = 10V, I_D =80A
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 / FDP070AN06A0 Rev. B