FDP070AN06A0 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 60V, 80A, 7m

March 2003
FDB070AN06A0 / FDP070AN06A0
N-Channel PowerTrench^® MOSFET
60V, 80A, 7mΩ
Features
• r_DS(ON) = 6.1mΩ (Typ.), V_GS = 10V, I_D = 80A
• Q_g(tot) = 51nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82567
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C < 97^oC, V_GS = 10V)
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
DRAIN
(FLANGE)
D
G
S
Ratings
60
±20
80
15
Figure 4
190
175
1.17
-55 to 175
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
0.86
62
43
Units
V
V
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDB070AN06A0 / FDP070AN06A0 Rev. B