FDMS9600S Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET

Typical Characteristics (Q1 N-Channel)T_J = 25°C unless otherwise noted
60
V_GS = 10V
50
40
30
20
10
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
V_GS = 3.5V
V_GS = 6V
V_GS = 4.5V
V_GS = 4V
V_GS = 3V
0
0.0
0.5
1.0
1.5
2.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V_GS = 3V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
V_GS =3.5V
V_GS = 4.5V
V_GS = 10V
V_GS = 4V
V_GS = 6V
10
20
30
40
50
60
I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.5
I_D = 12A
V_GS =10V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On-Resistance
vs Junction Temperature
60
PULSE DURATION = 300µs
50 ^{DUTY CYCLE = 2.0%MAX}
V_DD = 5V
40
30
20
10
0
1.0
T_J =125^oC
T_J = 25^oC
T_J = -55^oC
1.5
2.0
2.5
3.0
3.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
PULSE DURATION = 300µs
25
I_D = 6A
DUTY CYCLE = 2.0%MAX
20
15
T_J = 125^oC
10
5
T_J = 25^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
V_GS = 0V
10
1
T_J = 125^oC
0.1
T_J = 25^oC
0.01
T_J = -55^oC
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS9600S Rev.D
4
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