FDMS8670S_08 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET TM

Typical Characteristics T_J = 25°C unless otherwise noted
10
5000
8
V_DD = 10V
6
V_DD = 15V
V_DD = 20V
4
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
40
10
T_J = 25^oC
T_J = 125^oC
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE(ms)
1000
Figure 9. Unclamped Inductive
Switching Capability
1000
C_iss
C_oss
f = 1MHz
VGS = 0V
C_rss
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
120
100
V_GS = 10V
80
60
V_GS = 4.5V
40
Limited by Package
20
R_θJC = 1.6^oC/W
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
100
100us
10
1ms
10ms
1
100ms
OPERATION IN THIS
0.1 ^{AREA MAY BE}
LIMITED BY r_DS(on)
0.01
1E-3
0.1
1
SINGLE PULSE
T_J = MAX RATED
T_A = 25^OC
10
1s
10s
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
500
FOR TEMPERATURES
100
V_GS = 10V
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
1_---5_----0_----–_-----T_---A---
125
10
T_A = 25^oC
SINGLE PULSE
1
0.6
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDMS8670S Rev.C4
4
www.fairchildsemi.com