FDMS8670S_08 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET TM

Typical Characteristics T_J = 25°C unless otherwise noted
180
PULSE DURATION = 80µs
V_GS = 10V _{DUTY CYCLE = 0.5%MAX}
150
120
V_GS = 4.5V
V_GS = 3.5V
V_GS = 4V
90
60
V_GS = 3V
30
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
PULSE DURATION = 80µs
3.5
DUTY CYCLE = 0.5%MAX
V_GS = 3V
3.0
V_GS = 3.5V
2.5
V_GS = 4V
2.0
V_GS = 4.5V
1.5
1.0
0.5
0
V_GS = 10V
30
60
90 120 150 180
I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D = 20A
1.6 ^VGS ^{= 10V}
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
120
90
60
T_J = 125^oC
T_J = 25^oC
30
T_J = -55^oC
0
1
2
3
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
I_D = 20A
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
T_J = 125^oC
4
T_J = 25^oC
2
3
4
5
6
7
8
9 10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
10 V_GS = 0V
1 _{TJ = 125}o_C
0.1
0.01
T_J = 25^oC
T_J = -55^oC
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS8670S Rev.C4
3
www.fairchildsemi.com