FDMS8660S_08 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench SyncFETTM

Typical Characteristics T_J = 25°C unless otherwise noted
10
10⁴
I_D = 25A
V_DS = 10V
8
6
V_DS = 15V
10³
4
V_DS = 20V
C_iss
C_oss
C_rss
2
0
0 10 20 30 40 50 60 70 80 90
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
60
T_J = 100^oC
10
T_J = 25^oC
1
0.01
0.1
1
10
100 1000 3000
t_AV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
1000
100
1ms
10
10ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(on)
0.1
0.01
0.01
SINGLE PULSE
T_J = MAX RATED
T_A = 25^OC
0.1
1
10
100ms
1s
10s
DC
100
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
f = 1MHz
VGS = 0V
10²
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
80
70
V_GS = 10V
60
50
V_GS = 4.5V
40
30
Limited by Package
20
R_θJC = 1.5^oC/W
10
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
3000
1000
100
10
V_GS = 10V
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
1_---5_---0_-----–_----T_----A---
125
T_A = 25^oC
1
SINGLE PULSE
0.1
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDMS8660S Rev C3
4
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