FDMS8660S_08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench SyncFETTM

June 2008
FDMS8660S
N-Channel PowerTrench^® SyncFET^TM
tm
30V, 40A, 2.4mΩ
Features
General Description
„ Max r_DS(on) = 2.4mΩ at V_GS = 10V, I_D = 25A
„ Max r_DS(on) = 3.5mΩ at V_GS = 4.5V, I_D = 21A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest r_DS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Application
Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
DD
Power 56 (Bottom view)
D₅
D₆
D₇
D8
4G
3S
2S
1^S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 3)
(Note 1a)
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
Device Marking
FDMS8660S
Device
FDMS8660S
Package
Power 56
Reel Size
13’’
©2008 Fairchild Semiconductor Corporation
1
FDMS8660S Rev C3
Ratings
30
±20
40
147
25
200
937
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
1.5
°C/W
50
Tape Width
12mm
Quantity
3000 units
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