FDMS86163P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = -7.9 A
8
V_DD = -50 V
V_DD = -25 V
V_DD = -75 V
6
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
C_iss
C_oss
100
C_rss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
100
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
T_J = 25 ^oC
T_J = 100 ^oC
10
T_J = 125 ^oC
1
0.001
0.01 0.1
1
10 100
t_AV, TIME IN AVALANCHE (ms)
1000
Figure 9. Unclamped Inductive
Switching Capability
60
R_θJC = 1.2 ^oC/W
50
40
V_GS = -10 V
30
V_GS = -6 V
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
100
10 µs
10 _{THIS AREA IS}
LIMITED BY r_DS(on)
100 µs
1 ms
SINGLE PULSE
1 ^TJ ^{= MAX RATED}
R_θJC = 1.2 ^oC/W
T_C = 25 ^oC
CURVE BENT TO
MEASURED DATA
10 ms
DC
0.1
1
10
100 200
-V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
20000
10000
1000
SINGLE PULSE
R_θJC = 1.2 ^oC/W
T_C = 25 ^oC
100
50
10^-5
10^-4
10^-3
10^-2
10^-1
1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2014 Fairchild Semiconductor Corporation
4
FDMS86163P Rev.C
www.fairchildsemi.com