FDMS86163P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

FDMS86163P
P-Channel PowerTrench^® MOSFET
-100 V, -50 A, 22 mΩ
Features
„ Max r_DS(on) = 22 mΩ at V_GS = -10 V, I_D = -7.9 A
„ Max r_DS(on) = 30 mΩ at V_GS = -6 V, I_D = -5.9 A
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
„ 100% UIL tested
„ RoHS Compliant
May 2014
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Active Clamp Switch
„ Load Switch
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
S
D
D
D
D
G
D
D
Power 56
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
-100
±25
-50
-7.9
-100
486
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS86163P
Device
FDMS86163P
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
1
FDMS86163P Rev.C
www.fairchildsemi.com