FDMS3620S Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET

Typical Characteristics (Q1 N-Channel) T_J = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
0.0
V_GS = 10 V
V_GS = 4.5 V
V_GS = 3.5 V
V_GS = 3 V
V_GS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3
0.6
0.9
1.2
1.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
V_GS = 2.5 V
2.0
1.5
V_GS = 3 V
1.0
0.5
0
V_GS = 3.5 V V_GS = 4.5 V V_GS = 10 V
10 20 30 40 50 60 70
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D = 17.5 A
1.6
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
20
I_D = 17.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
12
8
T_J = 125 ^oC
4
T_J = 25 ^oC
0
2 3 4 5 6 7 8 9 10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
70
PULSE DURATION = 80 μs
60 ^{DUTY CYCLE = 0.5% MAX}
V_DS = 5 V
50
40
T_J = 150 ^oC
30
T_J = 25 ^oC
20
T_J = -55 ^oC
10
0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
70
V_GS = 0 V
10
T_J = 150 ^oC
1
0.1
0.01
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
4
FDMS3620S Rev.C1
www.fairchildsemi.com