FDMS3620S Datasheet, PDF (10/12 Pages) Fairchild Semiconductor – PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET

Typical Characteristics (Q2 N-Channel)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3620S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
45
40
35
30
25
di/dt = 300 A/μs
20
15
10
5
0
-5
0 50 100 150 200 250 300 350
TIME (ns)
Figure 27. FDMS3620S SyncFET body
diode reverse recovery characteristic
10^-2
T_J = 125 ^oC
10^-3
T_J = 100 ^oC
10^-4
10^-5
10^-6
0
T_J = 25 ^oC
5
10
15
20
25
V_DS, REVERSE VOLTAGE (V)
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2012 Fairchild Semiconductor Corporation
10
FDMS3620S Rev.C1
www.fairchildsemi.com