FDMS2672_12 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 200V, 20A, 77m

Typical Characteristics T_J = 25°C unless otherwise noted
10
V_DD = 50V
8
V_DD = 100V
6
V_DD = 150V
4
2
0
0
10
20
30
40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
5
4
3
2
T_J = 125^oC
T_J = 25^oC
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
4000
1000
C_iss
C_oss
100
C_rss
f = 1MHz
VGS = 0V
10
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
25
20
V_GS = 10V
15
V_GS = 6V
10
5 _{RTJC = 1.6oC/W}
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
60
10
100us
1
1ms
10ms
0.1 ^{OPERATION IN THIS}
AREA MAY BE
LIMITED BY r_DS(on)
100ms
0.01
SINGLE PULSE
1s
T_J = MAX RATED
T_A = 25^OC
DC
1E-3
0.1
1
10
100
700
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
10
V_GS = 10V
T_A = 25^oC
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
1_----5_---0_----–_-----T_---A---
125
1
SINGLE PULSE
0.3
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDMS2672 Rev.C1
4
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