FDMS2672_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 200V, 20A, 77m

April 2012
FDMS2672
tm
N-Channel UltraFET Trench MOSFET
200V, 20A, 77m:
Features
General Description
„ Max r_DS(on) = 77m: at V_GS = 10V, I_D = 3.7A
„ Max r_DS(on) = 88m: at V_GS = 6V, I_D = 3.5A
„ Low Miller Charge
„ RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r_DS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
„ DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3^S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
200
±20
20
3.7
20
33.8
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_TJC
R_TJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking
FDMS2672
Device
FDMS2672
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS2672 Rev.C1
www.fairchildsemi.com