FDMC86260 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 5.4 A
8
6
V_DD = 75 V
V_DD = 50 V
V_DD = 100 V
4
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
C_iss
100
C_oss
10
f = 1 MHz
VGS = 0 V
C_rss
1
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
T_J = 25 ^oC
T_J = 100 ^oC
T_J = 125 ^oC
1
0.001
0.1
1
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
10 20
30
25
20
15
V_GS = 10 V
10
V_GS = 6 V
Limited by Package
5
R_θJC = 2.3 ^oC/W
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
10
100 µs
1
THIS AREA IS
0.1 ^{LIMITED BY r}_DS(on)
SINGLE PULSE
0.01
0.001
0.1
T_J = MAX RATED
R_θJA = 125 ^oC/W
T_A = 25 ^oC
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100
500
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
SINGLE PULSE
R_θJA = 125 ^oC/W
T_A = 25 ^oC
10
1
0.5
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
4
FDMC86260 Rev. C1
www.fairchildsemi.com