FDMC86260 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

FDMC86260
N-Channel Power Trench^® MOSFET
150 V, 16 A, 34 mΩ
December 2012
Features
General Description
„ Max r_DS(on) = 34 mΩ at V_GS = 10 V, I_D = 5.4 A
„ Max r_DS(on) = 44 mΩ at V_GS = 6 V, I_D = 4.8 A
„ High performance technology for extremely low r_DS(on)
„ 100% UIL Tested
„ Termination is Lead-free
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
Pin 1
Pin 1
S
S
SG
S
D
S
D
D
DD
D
Top
Bottom
Power 33
S
D
G
D
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
16
5.4
48
121
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.3
(Note 1a)
53
°C/W
Device Marking
FDMC86260
Device
FDMC86260
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC86260 Rev. C1
www.fairchildsemi.com