FDMC86139P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = -4.4 A
8
6
V_DD = -50 V
V_DD = -25 V
V_DD = -75 V
4
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
C_iss
100
C_oss
C_rss
10
f = 1 MHz
VGS = 0 V
1
0.1
1
10
100
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
20
T_J = 25 ^oC
10
T_J = 100 ^oC
T_J = 125 ^oC
1
0.001
0.01
0.1
1
10 50
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
40
10
100 μs
1 ms
1
THIS AREA IS
LIMITED BY r_DS(on)
0.1 _{SINGLE PULSE}
T_J = MAX RATED
R_θJA = 125 ^oC/W
0.01 T_A = 25 ^oC
0.005
0.1
1
CURVE BENT TO
MEASURED DATA
10
10 ms
100 ms
1s
10 s
DC
100 400
-V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
15
Limited by Package
10
5
V_GS = -10 V
V_GS = -6 V
R_θJC = 3.1 ^oC/W
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
2000
1000
100
10
SINGLE PULSE
R_θJA = 125 ^oC/W
1 T_A = 25 ^oC
0.5
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
4
FDMC86139P Rev.C2
www.fairchildsemi.com