FDMC86139P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

FDMC86139P
P-Channel PowerTrench^® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
„ Max r_DS(on) = 67 mΩ at V_GS = -10 V, I_D = -4.4 A
„ Max r_DS(on) = 89 mΩ at V_GS = -6 V, I_D = -3.6 A
„ Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
„ This product is optimised for fast switching applications as
well as load switch applications
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ Active Clamp Switch
„ Load Switch
Top
Bottom
Pin 1
S
D
SS _S
G
S
D
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
-100
±25
-15
-4.4
-30
121
40
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.1
(Note 1a)
53
°C/W
Device Marking
FDMC86139P
Device
FDMC86139P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMC86139P Rev.C2
www.fairchildsemi.com