FDMC8462 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
10
I_D = 13.5A
8
6
4
2
V_DD = 16V
V_DD = 20V
V_DD = 24V
5000
1000
100
f = 1MHz
VGS = 0V
C_iss
C_oss
C_rss
0
0
5 10 15 20 25 30 35
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10
0.1
1
10
40
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
30
75
10
T_J = 25^oC
T_J = 125^oC
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE(ms)
100 400
Figure 9. Unclamped Inductive
Switching Capability
60
V_GS = 10V
45
V_GS = 4.5V
30
15
Limited by Package
R_θJC = 3^oC/W
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
10
1ms
1 THIS AREA IS
LIMITED BY r_DS(on)
0.1
0.01
0.01
SINGLE PULSE
T_J = MAX RATED
R_θJA = 125^oC/W
T_A = 25^oC
0.1
1
10
V_DS, DRAIN to SOURCE VOLTAGE (V)
10ms
100ms
1s
10s
DC
100
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
V_GS = 10V
SINGLE PULSE
R_θJA = 125^oC/W
T_A = 25^oC
10
1
0.5
10^-4
10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
FDMC8462 Rev.C
4
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