FDMC8462 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

March 2008
FDMC8462
tm
N-Channel Power Trench^® MOSFET
40V, 20A, 5.8mΩ
Features
General Description
„ Max r_DS(on) = 5.8mΩ at V_GS = 10V, I_D = 13.5A
„ Max r_DS(on) = 8.0mΩ at V_GS = 4.5V, I_D = 11.8A
„ Low Profile - 1mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC - DC Conversion
S ^{Pin 1}
S
S
G
D5
D6
4G
3S
D
D
D
D
Top
Bottom
Power 33
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
40
±20
20
64
14
50
216
41
2.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
53
°C/W
Device Marking
FDMC8462
Device
FDMC8462
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMC8462 Rev.C
www.fairchildsemi.com