FDM3622_12 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
100
10
r_DS(on) LIMITED
100us
1
1ms
10ms
0.1
SINGLE PULSE
TJ = MAX RATED
R_θJA = 135^oC/W
TA = 25oC
0.01
0.1
1
100ms
1s
DC
10
100 400
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 7. Forward Bias Safe
Operating Area
20
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
10 _{tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]}
STARTING T_J = 25^oC
STARTING T_J = 150^oC
1
0.001
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 8. Uncalamped Inductive
Switching Capability
1.2
6
1.0
V_GS = 10V
0.8
4
0.6
0.4
2
0.2
0
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
Figure 9. Normalized Power dissipation
vs Ambient Temperature
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain Current
vs Ambient Temperature
1.2
1.2
V_GS = V_DS, I_D = 250μA
I_D = 250μA
1.0
1.1
0.8
1.0
0.6
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Gate Threshold voltage
vs Junction Temperature
0.9
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
FDM3622 Rev.C2
4
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