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FDM3622_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ | |||
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FDM3622
N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ
Features
General Description
November 2012
 Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
 Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
 Low Miller Charge
 Low QRR Body Diode
 Optimized efficiency at high frequencies
 UIS Capability (Single Pulse and Repetitive Pulse)
 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Applications
 Distributed Power Architectures and VRMs.
 Primary Switch for 24V and 48V Systems
 High Voltage Synchronous Rectifier
 Formerly developmental type 82744
Top
Bottom
Pin 1
S SG
S
S
D
S
D
S
D
DD
D
D
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
100
±20
4.4
20
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.0
(Note 1a)
60
°C/W
Device Marking
FDM3622
Device
FDM3622
Package
MLP 3.3x3.3
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDM3622 Rev.C2
www.fairchildsemi.com
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