FDH50N50_F133 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. I = 250 μA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 24 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
10³
Operation in This Area
is Limited by R
DS(on)
10²
10 us
100 us
1 ms
10 ms
10¹
DC
Notes :
10⁰
1. T = 25 ^oC
C
2. T = 150 oC
J
3. Single Pulse
10^-1
10⁰
10¹
10²
10³
V , Drain-Source Voltage [V]
DS
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
4,000
3,500
3,000
2,500
2,000
1,500
1,000
500
0
0
di/dt(on)
Notes :
1. V = 400 V
DS
2. V = 12 V
GS
3. I = 25A
D
4. T = 125oC
J
di/dt(off)
5
10
15
20
25
30
35
40
45
50
R , Gate resistance [Ω]
G
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
45
40
35
30
25
dv/dt(on)
Notes :
1. V = 400 V
DS
2. V = 12 V
GS
3. I = 25A
D
4. T = 125oC
J
20
15
dv/dt(off)
10
5
0
0
5
10
15
20
25
30
35
40
45
50
R , Gate resistance [Ω]
G
4
FDH50N50_F133 / FDA50N50 Rev. A
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