FDH50N50_F133 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FDH50N50_F133 / FDA50N50
500V N-Channel MOSFET
October 2008
UniFET^TM
Features
• 48A, 500V, R_DS(on) = 0.105Ω @V_GS = 10 V
• Low gate charge ( typical 105 nC)
• Low C_rss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
GD _S
TO-247
FDH Series
G DS
TO-3P
FDA Series
{^D
z

G_{
z
z
{_S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
FDH50N50_F133/FDA50N50
Drain-Source Voltage
500
Drain Current
- Continuous (T_C = 25°C)
48
- Continuous (T_C = 100°C)
30.8
Drain Current
- Pulsed
(Note 1)
192
Gate-Source voltage
±20
Single Pulsed Avalanche Energy
(Note 2)
1868
Avalanche Current
(Note 1)
48
Repetitive Avalanche Energy
(Note 1)
62.5
Peak Diode Recovery dv/dt
(Note 3)
4.5
Power Dissipation (T_C = 25°C)
625
- Derate above 25°C
5
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.2
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
1
FDH50N50_F133 / FDA50N50 Rev. A
www.fairchildsemi.com