FDG326P Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Typical Characteristics
5
I_D = -1.5A
4
3
2
V_DS = -5V
-15V
-10V
1
0
0
1
2
3
4
5
6
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
R_DS(ON) LIMIT
100µs
1ms
1
V_GS = -4.5V
0.1 ^{SINGLE PULSE}
R_θJA = 260^oC/W
T_A = 25^oC
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
700
600
500
400
300
200
100
0
0
C_ISS
f = 1MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
SINGLE PULSE
R_θJA = 260^oC/W
24
T_A = 25^oC
18
12
6
0
0.0001 0.001
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R_θJA(t) = r(t) + R_θJA
R_θJA = 260 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
1000
FDG326P Rev D(W)