FDG326P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –1.5 A, –20 V.
RDS(ON) = 140 mΩ @ VGS = –4.5 V
RDS(ON) = 180 mΩ @ VGS = –2.5 V
RDS(ON) = 250 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
SC70-6
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.26
FDG326P
7’’
1
6
2
5
3
4
Ratings
–20
±8
–1.5
–6
0.75
0.48
-55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)