FDB8876 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mOhm

Typical Characteristics T_A = 25°C unless otherwise noted
10
V_DD=15V
8
5000
C_ISS = C_GS + C_GD
6
4
2
WAVEFORMS IN
DESCENDING ORDER:
I_D=40A,I_D=5A
0
0
5
10 15 20 25 30 35
Qg,GATE CHARGE(nC)
Figure 7. Gate Charge characteristics
1000
C_RSS = C_GD
C_OSS ≅ C_DS + C_GD
V_GS = 0V, f = 1MHz
100
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation characteristics
100
1000
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
1
0.001
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
80
60
V_GS = 10V
40
V_GS = 4.5V
20
10µs
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
1ms
1
SINGLE PULSE
T_J = MAX RATED
T_C = 25^oC
10ms
DC
0.1
1
10
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Safe Operating Area
800
SINGLE PULSE
R_θJC = 2.14^oC/W
T_J = 25^oC
100
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
60
10^-5
10^-4
10^-3
10^-2
10^-1
t, PULSE WIDTH (s)
10⁰
10¹
Figure 12. Normalized Drain to Source Breake
Down Voltage vs Junction Temperature
FDB8876 Rev. A
4
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