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FDB8876 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mOhm | |||
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November 2005
FDB8876
N-Channel PowerTrench® MOSFET
30V, 71A, 8.5mâ¦
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Features
 rDS(ON) = 8.5mâ¦, VGS = 10V, ID = 40A
 rDS(ON) = 10.3mâ¦, VGS = 4.5V, ID = 40A
 High performance trench technology for extremely low
rDS(ON)
 Low gate charge
 High power and current handling capability
 RoHS Compliant
D
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 4.5V)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in2copper pad area
Package Marking and Ordering Information
Device Marking
FDB8876
Device
FDB8876
Package
TO-263AB
Reel Size
330mm
G
S
Ratings
30
±20
71
65
Figure 4
180
70
-55 to 175
2.14
43
Tape Width
24mm
Units
V
V
A
A
A
mJ
W
oC
oC/W
oC/W
Quantity
800 units
©2005 Fairchild Semiconductor Corporation
1
FDB8876 Rev. A
www.fairchildsemi.com
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