FDA16N50F109 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET

Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V_GS = 0 V
2. I_D = 250 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V_GS = 10 V
2. I_D = 8.3 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
20
10²
10 s
100 s
15
10¹
1 ms
10 ms
100 ms
Operation in This Area
DC
10⁰
is Limited by R _DS(on)
10
10^-1
10^-2
10⁰
* Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
V_DS, Drain-Source Voltage [V]
5
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
Figure 11. Transient Thermal Response Curve
10⁰
D =0.5
0.2
1 0 ^-1
0.1
0.05
0.02
0.01
1 0 ^-2
single pulse
* N otes :
1. Z _JC(t) = 0.6 ^oC /W M ax.
2. D uty Factor, D =t₁/t₂
3. T _JM - T _C = P _DM * Z _JC(t)
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q uare W ave P ulse D uration [sec]
©2007 Fairchild Semiconductor Corporation
4
FDA16N50_F109 Rev. C1
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