FDA16N50F109 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET

FDA16N50_F109
N-Channel UniFET^TM MOSFET
500V, 16.5 A, 380 m
Features
• R_DS(on) = 380 m (Max.) @ V_GS = 10, I_D = 8.3 A
• Low Gate Charge (Typ. 32 nC)
• Low C_rss (Typ. 20 pF)
• 100% Avalanche Tested
Applications
• PDP TV
• Uninterruptible Power Supply
November 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-3PN
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25C)
- Continuous (T_C = 100C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25C)
- Derate above 25C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDA16N50_F109
500
16.5
9.9
66
30
780
16.5
20.5
4.5
205
2.1
-55 to +150
300
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDA16N50_F109
0.6
40
©2007 Fairchild Semiconductor Corporation
1
FDA16N50_F109 Rev. C1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
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