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FCP7N60 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2.
I
D
=
250µA
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 3.5 A
D
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 9-1. Maximum Safe Operating Area
for FCP7N60
102 Operation in This Area
is Limited by R
DS(on)
101
100
100 us
1 ms
10 ms
DC
Notes :
10-1
1.
T
C
=
25°C
2.
T
J
=
150°C
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
T , Case Temperature [? ]
C
Figure 9-2. Maximum Safe Operating Area
for FCPF7N60
102 Operation in This Area
is Limited by R
DS(on)
101
100 us
1 ms
10 ms
100
100 ms
DC
Notes :
10-1
1.
T
C
=
25°C
2.
T
J
=
150°C
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
4
FCP7N60 / FCPF7N60 Rev. A
www.fairchildsemi.com
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