FCP7N60 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCP7N60 / FCPF7N60
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Typ. R_DS(on) = 0.53Ω
• Ultra low gate charge (typ. Q_g = 25nC)
• Low effective output capacitance (typ. C_oss.eff = 60pF)
• 100% avalanche tested
SuperFET^TM
Description
SuperFET^TM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
TO-220
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP7N60 FCPF7N60
600
7
7*
4.4
4.4*
21
21*
± 30
230
7
8.3
4.5
83
31
0.67
0.25
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP7N60
1.5
62.5
FCPF7N60
4.0
62.5
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FCP7N60 / FCPF7N60 Rev. A
www.fairchildsemi.com